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Volumn 241, Issue 3, 2002, Pages 271-276

Arsenic-induced Ge island morphology changes during molecular beam epitaxy of Ge on Si(0 0 1)

Author keywords

A1. Nucleation; A3. Molecular beam epitaxy; B1. Germanium silicon alloys; B2. Semiconducting silicon

Indexed keywords

CRYSTAL ORIENTATION; EVAPORATION; NUCLEATION; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; STACKING FAULTS; SURFACE ACTIVE AGENTS;

EID: 0036606509     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01080-1     Document Type: Article
Times cited : (5)

References (19)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.