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Volumn 241, Issue 3, 2002, Pages 271-276
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Arsenic-induced Ge island morphology changes during molecular beam epitaxy of Ge on Si(0 0 1)
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Author keywords
A1. Nucleation; A3. Molecular beam epitaxy; B1. Germanium silicon alloys; B2. Semiconducting silicon
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Indexed keywords
CRYSTAL ORIENTATION;
EVAPORATION;
NUCLEATION;
SEMICONDUCTING GERMANIUM;
SEMICONDUCTING SILICON;
STACKING FAULTS;
SURFACE ACTIVE AGENTS;
COEVAPORATION;
THREE-DIMENSIONAL ISLANDS;
MOLECULAR BEAM EPITAXY;
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EID: 0036606509
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(02)01080-1 Document Type: Article |
Times cited : (5)
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References (19)
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