Electron and hole trapping in the bulk and interface with Si of a thermal oxide grown on the sidewalls and base of a U-shaped silicon trench

Solid-State Electronics

Volumn 46, Issue 6, 2002, Pages 837-845

  Suliman, S A ^a   Awadelkarim, O O ^a   Fonash, S J ^a   Ridley, R S ^b   Dolny, G M ^b   Hao, J ^b   Knoedler, C M ^b  

^a The Pennsylvania State University   (United States)

^b FAIRCHILD SEMICONDUCTOR   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CAPACITORS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRONS; HOLE TRAPS; REACTIVE ION ETCHING; SEMICONDUCTING SILICON;

SILICON TRENCH;

MOSFET DEVICES;

EID: 0036604528     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00344-6     Document Type: Article

References (23)

1. Ultra-low specific o-resistance UMOSFET with trench contacts for source and body regions realized by self-aligned process
2. Comparison of ultra-low specific on-resistance UMOSFET structures: The ACCUFET, EXTFET, INVFET, and conventional UMOSFETs
3. The behavior of very high current density power MOSFETs
4. Trends in power semiconductor devices
5. The effects of channel boron-doping on the performance and hot electron reliability of n-channel trench UMOSFETs
6. 2 high-speed double layer gate UMOSFET realized by selective CVD tungsten
7. 2 vertical trench power MOSFET
8. Damage to n-MOSFETs from electrical stress: Relationship to processing damage and impact on device reliability
9. Deep level transient spectroscopy of bulk traps and interface states in Si MOS diodes
10. Deep level transient spectroscopy: Increased accuracy interpretation of silicon/silicon dioxide interface state data by the assistance of computer simulations
11. Deep level transient spectroscopy: A new method to characterize traps in semiconductors
12. Surface conditioning issues related to patterning and etching
13. 2/p-Si structures
14. Electrical properties of contact etched p-Si: A comparison between magnetically enhanced and conventional reactive ion etching
15. Channeling and diffusion in dry-etch damage
16. Molecular dynamics simulations of deep penetration by channeled ions during low-energy ion bombardment of III-V semiconductors
17. Diffusion and channeling of low-energy ions: The mechanism of ion damage
18. 2 interface of oxidized silicon wafers
19. 2 interface
20. 2 interface after vacuum anneal
21. 2 interface