The effects of channel boron-doping on the performance and hot electron reliability of N-channel trench UMOSFETs

Solid-State Electronics

Volumn 45, Issue 5, 2001, Pages 655-661

  Suliman, S A ^a   Awadelkarim, O O ^a   Fonash, S J ^a   Dolny, G M ^b   Hao, J ^b   Ridley, R S ^b   Knoedler, C M ^b  

^a Electronic Materials and Processing Research Laboratory   (United States)

^b FAIRCHILD SEMICONDUCTOR   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL IMPURITIES; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; ELECTRON MOBILITY; GATES (TRANSISTOR); IONIZATION; SEMICONDUCTING BORON; SEMICONDUCTOR DOPING;

HOT ELECTRON RELIABILITY;

MOSFET DEVICES;

EID: 0035334206     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00124-1     Document Type: Article

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