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Journal of Materials Research

Volumn 17, Issue 6, 2002, Pages 1363-1370

Grain-boundary voiding in self-passivated Cu-1 at.% Al alloy films on Si substrates

(3) Weiss, D a,b Kraft, O a Arzt, E a

a MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS (Germany)

b MASSACHUSETTS INSTITUTE OF TECHNOLOGY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COPPER ALLOYS; METALLIC FILMS; MORPHOLOGY; OXIDATION; PASSIVATION; SEMICONDUCTING SILICON; SUBSTRATES; SURFACE STRUCTURE; THERMAL EFFECTS;

COPPER ALUMINUM ALLOY; COPPER FILM TECHNOLOGY; GRAIN BOUNDARY VOIDING; SELF PASSIVATION; SEMICONDUCTOR METALLIZATION;

GRAIN BOUNDARIES;

EID: 0036600905 PISSN: 08842914 EISSN: None Source Type: Journal
DOI: 10.1557/JMR.2002.0203 Document Type: Article

Times cited : (14)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.