Highly uniform and low turn-on voltage Si field emitter arrays fabricated using chemical mechanical polishing

IEEE Electron Device Letters

Volumn 21, Issue 2, 2000, Pages 66-69

  Ding, Meng ^a   Kim, Han ^b   Akinwande, Akintunde I ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

^b Institute for Advanced Engineering (IAE)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL POLISHING; CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POWER SUPPLIES TO APPARATUS; LEAKAGE CURRENTS; LITHOGRAPHY; OXIDATION; PLASMA ETCHING; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

CHEMICAL MECHANICAL POLISHING; FIELD EMISSION; FIELD EMITTER ARRAYS; FOWLER-NORDHEIM THEORY;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0034140977     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.821669     Document Type: Article

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