On the phosphorus characterization in thin SiO2 (P, B) CVD layer deposited onto a silicon substrate by PIXE

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 192, Issue 3, 2002, Pages 311-317

  Nsouli, B ^a   Roumie M ^a   Zahraman, K ^a   Thomas, J P ^b   Nasreddine, M ^a  

^a NATIONAL COUNCIL FOR SCIENTIFIC RESEARCH   (Lebanon)

^b UNIVERSITÉ LYON 1   (France)

Author keywords

CVD; Low energy PIXE; Phosphorus; PIXE; SiO2; Thin layers

Indexed keywords

CHARACTERIZATION; CHEMICAL VAPOR DEPOSITION; HELIUM; ION BEAMS; PHOSPHORUS; PROTON BEAMS; SEMICONDUCTING SILICON; SUBSTRATES;

SILICON SUBSTRATES;

SILICA;

EID: 0036577005     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(02)00475-5     Document Type: Article

References (12)