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Journal of Electronic Materials

Volumn 31, Issue 5, 2002, Pages 336-339

Magnetism in SiC implanted with high doses of Fe and Mn

(9) Pearton, S J a Lee, K P a Overberg, M E a Abernathy, C R a Theodoropoulou, N b Hebard, A F b Wilson, R G c Chu, S N G d Zavada, J M e

a University of Florida (United States)

b UNIVERSITY OF FLORIDA (United States)

c Research Triangle Park ^* (United States)

d AGERE SYSTEMS (United States)

e U S ARMY RESEARCH OFFICE (United States)

Author keywords

6H SiC; Dilute magnetic semiconductor; Ion implantation

Indexed keywords

ANNEALING; FERROMAGNETISM; ION IMPLANTATION; IRON; MAGNETOMETERS; MANGANESE; PARAMAGNETISM; TRANSMISSION ELECTRON MICROSCOPY;

SELECTED-AREA DIFFRACTION PATTERN (SADP) ANALYSIS;

SILICON CARBIDE;

EID: 0036575897 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-002-0078-7 Document Type: Article

Times cited : (9)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.