SCOPUS 정보 검색 플랫폼

Volumn 39, Issue 6-7, 1999, Pages 885-889

Leakage current variation during two different modes of electrical stressing in undoped hydrogenated n-channel polysilicon thin film transistors (TFTs)

(6) Farmakis, F V a Brini, J a Kamarinos, G a Dimitriadis, C A b Gueorguiev, V K c Ivanov, Tz E c

a Grenoble INP Phelma (France)

b ARISTOTLE UNIVERSITY OF THESSALONIKI (Greece)

c INSTITUTE OF SOLID STATE PHYSICS (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); HOT CARRIERS; OXIDES; SEMICONDUCTING SILICON COMPOUNDS; THIN FILM TRANSISTORS;

ELECTRICAL STRESSING; ON-STATE BIAS STRESS;

LEAKAGE CURRENTS;

EID: 0033143184 PISSN: 00262714 EISSN: None Source Type: Journal
DOI: 10.1016/S0026-2714(99)00118-3 Document Type: Article

Times cited : (5)

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