Optical properties of undoped n-AlGaN/GaN superlattices as affected by built-in and external-electric field and by Ar-implantation-induced partial disordering

Journal of Electronic Materials

Volumn 31, Issue 5, 2002, Pages 384-390

  Polyakov, A Y ^a   Smirnov, N B ^a   Govorkov, A V ^a   Shlensky, A A ^a   Mil'vidskii, M G ^a   Pearton, S J ^b   Faleev, N N ^c   Bublik, V T ^d   Chsherbatchev, K D ^d   Osinsky, A ^e   Norris, P E ^e   Dravin, V A ^f   Wilson, R G ^g  

^a INSTITUTE OF RARE METALS   (Russian Federation)

^b J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^c Texas Tech University   (United States)

^d NATIONAL UNIVERSITY OF SCIENCE AND TECHNOLOGY MISIS   (Russian Federation)

^e Corning Applied Technologies ^*  (United States)

^f LEBEDEV PHYSICAL INSTITUTE   (Russian Federation)

^g Stevenson Ranch ^*  (United States)

Author keywords

AlGaN GaN superlattice; Cathodoluminescence; Piezoelectric field effects; Superlattice disordering

Indexed keywords

ARGON; CATHODOLUMINESCENCE; DISLOCATIONS (CRYSTALS); ELECTRIC FIELDS; ION IMPLANTATION; PIEZOELECTRICITY; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR QUANTUM WELLS; STRAIN; SUPERLATTICES; X RAY DIFFRACTION ANALYSIS;

SUPERLATTICE DISORDERING;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0036575147     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-002-0088-5     Document Type: Article

References (18)