Analysis of sapphire implanted with different elements using artificial neural networks

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 190, Issue 1-4, 2002, Pages 241-246

  Vieira, A ^a,b   Barradas, N P ^a,c   Alves, E ^a,c  

^a INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

^b INSTITUTO SUPERIOR DE ENGENHARIA DO PORTO   (Portugal)

^c CENTRO DE FÍSICA NUCLEAR DA UNIVERSIDADE DE LISBOA   (Portugal)

Author keywords

Artificial neural networks; Ion implantation; Rutherford backscattering; Sapphire

Indexed keywords

DATA REDUCTION; ION IMPLANTATION; NEURAL NETWORKS; RELIABILITY THEORY; RUTHERFORD BACKSCATTERING SPECTROSCOPY;

IMPLANTED SAMPLES;

SAPPHIRE;

EID: 0036570023     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)01294-0     Document Type: Conference Paper

References (14)