Solubility and damage annealing of Er implanted single crystalline α-Al2O3

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 139, Issue 1-4, 1998, Pages 313-317

  Alves, E ^a   Da Silva, R C ^a   Da Silva, M F ^a   Soares, J C ^b  

^a INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

^b UNIVERSITY OF LISBON   (Portugal)

Author keywords

Er precipitation; Expitaxial regrowth; Sapphire ( Al2O3); Solubility

Indexed keywords

AMORPHOUS FILMS; ANNEALING; CRYSTAL ORIENTATION; CRYSTALLIZATION; DIFFUSION IN SOLIDS; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; ERBIUM; ION IMPLANTATION; SAPPHIRE; SINGLE CRYSTALS; SOLUBILITY;

DECHANNELING RATE;

CORUNDUM;

EID: 0032041094     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(97)90950-2     Document Type: Article

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