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Volumn 190, Issue 1-4, 2002, Pages 587-591
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Surface segregation of Ge during Si growth on Ge/Si(0 0 1) at low temperature observed by high-resolution RBS
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Author keywords
Delta doping; Germanium; High resolution; RBS; Si(0 0 1); Surface segregation
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Indexed keywords
ACTIVATION ENERGY;
AMORPHOUS SILICON;
DEPOSITION;
DOPING (ADDITIVES);
EVAPORATION;
FABRICATION;
GERMANIUM;
HIGH TEMPERATURE EFFECTS;
LOW TEMPERATURE EFFECTS;
MULTILAYERS;
SURFACE SEGREGATION;
CRYSTAL GROWTH;
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EID: 0036569999
PISSN: 0168583X
EISSN: None
Source Type: Journal
DOI: 10.1016/S0168-583X(01)01257-5 Document Type: Article |
Times cited : (7)
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References (15)
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