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Volumn 190, Issue 1-4, 2002, Pages 587-591

Surface segregation of Ge during Si growth on Ge/Si(0 0 1) at low temperature observed by high-resolution RBS

Author keywords

Delta doping; Germanium; High resolution; RBS; Si(0 0 1); Surface segregation

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS SILICON; DEPOSITION; DOPING (ADDITIVES); EVAPORATION; FABRICATION; GERMANIUM; HIGH TEMPERATURE EFFECTS; LOW TEMPERATURE EFFECTS; MULTILAYERS;

EID: 0036569999     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)01257-5     Document Type: Article
Times cited : (7)

References (15)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.