In-situ observation of Ge δ-layer in Si(001) using quasi medium energy ion scattering spectroscopy

Materials Science in Semiconductor Processing

Volumn 2, Issue 2, 1999, Pages 159-164

  Fuse, Takashi ^a   Kawamoto, Kiyoshi ^a   Katayama, Mitsuhiro ^a   Oura, Kenjiro ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; CRYSTAL ORIENTATION; DIFFUSION IN SOLIDS; EPITAXIAL GROWTH; FLAME CLEANING; HYDROGEN; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SILICON WAFERS; SPECTROSCOPIC ANALYSIS;

ION SCATTERING SPECTROSCOPY; SOLID PHASE EPITAXY (SPE);

SEMICONDUCTING FILMS;

EID: 0032661395     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(99)00014-1     Document Type: Article

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