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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 136-138, Issue , 1998, Pages 1080-1085

Observation of behavior of Ge δ-doped layer in Si(001)

(6) Fuse, Takashi a Kawamoto, Kiyoshi a Shiizaki, Takashi a Tazou, Eisuke a Katayama, Mitsuhiro a Oura, Kenjiro a

a OSAKA UNIVERSITY (Japan)

Author keywords

Germanium; Ion scattering spectroscopy; Silicon; Stopping power

Indexed keywords

ANNEALING; CRYSTAL LATTICES; DIFFUSION IN SOLIDS; EPITAXIAL GROWTH; INTERFACES (MATERIALS); SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SPECTROSCOPY;

LOW ENERGY ION SCATTERING SPECTROSCOPY (LEIS); SOLID PHASE EPITAXY; STOPPING POWER;

NUCLEAR INSTRUMENTATION;

EID: 0032019025 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/S0168-583X(97)00794-5 Document Type: Article

Times cited : (3)

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