Movement of defects and atoms during ion beam induced crystallization

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 175-177, Issue , 2001, Pages 319-323

  Kinomura, A ^a   Chayahara, A ^a   Tsubouchi, N ^a   Heck, C ^a   Horino, Y ^a   Miyagawa, Y ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Defect diffusion; IBIEC; Impurity effect; Ion beam induced crystallization; Solid phase epitaxy

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL IMPURITIES; CRYSTALLIZATION; DIFFUSION; ION BEAMS;

ION BEAM INDUCED CRYSTALLIZATION; SOLID PHASE EPITAXY;

AMORPHOUS SILICON;

EID: 0035303312     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(00)00532-2     Document Type: Conference Paper

References (10)