Si selective epitaxial growth technology using UHV-CVD and its application to LSI fabrication

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3212, Issue , 1997, Pages 106-117

  Shishiguchi, S ^a   Yasunaga, T ^a   Aoyama, T ^a   Tatsumi, T ^a   Saito, S ^a  

^a NEC CORPORATION   (Japan)

Author keywords

DRAM; Epitaxy; HBT; MOS; SEG; UHV CVD

Indexed keywords

APPLICATIONS; BIPOLAR TRANSISTORS; CRYSTAL GROWTH; DYNAMIC RANDOM ACCESS STORAGE; EPITAXIAL GROWTH; FABRICATION; GROWTH (MATERIALS); HETEROJUNCTION BIPOLAR TRANSISTORS; LSI CIRCUITS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SILICON ALLOYS; SILICON WAFERS; SURFACE TREATMENT; TECHNOLOGY; TRANSISTORS; ULTRAHIGH VACUUM; VACUUM DEPOSITION;

DRAM; EPITAXY; HBT; MOS; SEG; UHV-CVD;

CHEMICAL VAPOR DEPOSITION;

EID: 33846897669     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.284582     Document Type: Conference Paper

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