Three-dimensional depth profiles of boron ions implanted in SiO2

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 180, Issue 1-4, 2001, Pages 216-221

  Liang, Jenq Horng ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; COMPUTER SIMULATION; ION IMPLANTATION; LEAST SQUARES APPROXIMATIONS; MONTE CARLO METHODS; PROBABILITY DISTRIBUTIONS; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; SILICA;

LONGITUDINAL RANGE STRAGGLING; PEARSON DISTRIBUTION;

SEMICONDUCTING FILMS;

EID: 0035365211     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)00420-7     Document Type: Conference Paper

References (15)