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Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

Volumn 20, Issue 3, 2002, Pages 809-813

Deposition of Ga2O3-x ultrathin films on GaAs by e-beam evaporation

(4) Oldham, N C a Hill, C J a Garland, C M a McGill, T C a

a CALIFORNIA INSTITUTE OF TECHNOLOGY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; ELECTRON BEAMS; EVAPORATION; HIGH RESOLUTION ELECTRON MICROSCOPY; MOLECULAR BEAM EPITAXY; MORPHOLOGY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRON BEAM EVAPORATION; FILM MORPHOLOGY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; METAL CAPPING;

ULTRATHIN FILMS;

EID: 0036565384 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.1469011 Document Type: Article

Times cited : (22)

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