Characterization of the novel polysilicon TFT with a subgate coupling structure

IEEE Transactions on Electron Devices

Volumn 49, Issue 4, 2002, Pages 564-567

  Chang, Kow Ming ^a,b   Chung, Yuan Hung ^b   Deng, Chi Gun ^b   Chung, Yuan Fu ^b   Lin, Jian Hong ^b  

^a IEEE   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Offset gated structure; ON OFF current ratio; Photomasking steps; Polysilicon thin film transistor (poly Si TFT); Subgate coupling structure

Indexed keywords

SUBGATE COUPLING STRUCTURES;

GATES (TRANSISTOR); LEAKAGE CURRENTS; LIQUID CRYSTAL DISPLAYS; MASKS; POLYSILICON; STATIC RANDOM ACCESS STORAGE;

THIN FILM TRANSISTORS;

EID: 0036540251     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.992863     Document Type: Article

References (11)

1. Anomalous leakage current in LPCVD polysilicon MOSFET's
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3. Characterization of offset-structure polycrystalline-silicon thin-film transistors
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5. Self-aligned offset gated Poly-Si TFT's with a floating sub-gate
6. A novel high-performance poly-silicon thin film transistor with a self-aligned thicker sub-gate oxide near the drain/source regions
7. An experimental study on the short-channel effects in undergated polysilicon thin film transistors with and without lightly doped drain structures
8. A novel thin-film transistor with self-aligned field induced drain
9. The effect of drain offset on current-voltage characteristics in sub micron polysilicon thin-film transistors
10. Active-gate thin-film transistor
11. Field and temperature acceleration model for time-dependent dielectric breakdown