High-quality narrow gap (approximately 1.52 eV) a-Si:H with improved stability fabricated by excited inert gas treatment

Solar Energy Materials and Solar Cells

Volumn 66, Issue 1-4, 2001, Pages 321-327

  Sato, H ^a   Fukutani, K ^a   Futako, W ^a   Kamiya, T ^a   Fortmann, C M ^a   Shimizu, I ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ANNEALING; ARGON; ENERGY GAP; HELIUM; NEON; PHOTOCONDUCTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON SOLAR CELLS; THIN FILMS;

CHEMICAL ANNEALING; PHOTOACTIVE LAYERS;

AMORPHOUS SILICON;

EID: 0035254039     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(00)00190-2     Document Type: Article

References (9)

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