Observation of zinc-blende to diamond transition in metastable (GaAs)1-x(Ge2)x alloys by Raman scattering

Solid State Communications

Volumn 109, Issue 5, 1999, Pages 295-300

  Salazar Hernandez B ^a   Vidal, M A ^a   Constantino, M E ^a   Navarro Contreras, H ^a  

^a INSTITUTO DE INVESTIGACIÓN EN COMUNICACIÓN ÓPTICA   (Mexico)

Author keywords

A. Semiconductors; B. Epitaxy; D. Order disorder effects; Phonons; Thin films

Indexed keywords

COMPOSITION EFFECTS; EPITAXIAL GROWTH; ORDER DISORDER TRANSITIONS; PHONONS; RAMAN SCATTERING; SEMICONDUCTING GALLIUM ARSENIDE; THIN FILMS; X RAY CRYSTALLOGRAPHY;

METASTABILITY;

SEMICONDUCTING FILMS;

EID: 0033521455     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(98)00558-4     Document Type: Article

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