Impact of LOC structures on 670-nm (Al)GaInP high-power lasers

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 6, Issue 4, 2000, Pages 564-570

  Lichtenstein, N ^a   Winterhoff, R ^b   Scholz, Ferdinand ^b   Schweizer, Heinz ^b   Weiss, S ^a   Hutter, M ^c   Reichl, H ^c  

^a JDS UNIPHASE   (United States)

^b UNIVERSITY OF STUTTGART   (Germany)

^c FRAUNHOFER IZM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

LASER APPLICATIONS; LEAKAGE CURRENTS; OPTICAL DATA STORAGE; OPTICAL INTERCONNECTS; OPTICAL SENSORS; OPTICAL WAVEGUIDES; QUANTUM WELL LASERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; STATISTICAL METHODS; THERMODYNAMIC STABILITY;

BROAD AREA LASERS; CATASTROPHIC OPTICAL DAMAGE; DOUBLE QUANTUM WELL STRUCTURE; LARGE OPTICAL CAVITY LASER STRUCTURES; SINGLE QUANTUM WELL STRUCTURE; TRIPLE QUANTUM WELL STRUCTURE;

HIGH POWER LASERS;

EID: 0034217214     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.883369     Document Type: Article

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