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Journal of Crystal Growth

Volumn 240, Issue 1-2, 2002, Pages 52-56

Start of 2D nucleation by accumulation of Ga adatoms on GaAs (1 1 1)B facet

(4) Kishimoto, D a,b Nishinaga, T c Naritsuka, S c Sakaki, H a

a INSTITUTE OF INDUSTRIAL SCIENCE (Japan)

b FUJI ELECTRIC CO (Japan)

c UNIVERSITY OF TOKYO (Japan)

Author keywords

A1. Nucleation; A1. Surfaces; A3. Molecular beam epitaxy; B1. Gallium compounds; B2. Semiconducting gallium arsenide

Indexed keywords

ATOMS; CRYSTAL STRUCTURE; DIFFUSION; MOLECULAR BEAM EPITAXY; NUCLEATION; SURFACES;

ADATOM FLOW;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0036537934 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(02)00844-8 Document Type: Article

Times cited : (4)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.