Effect of substrate rotation on inter-surface diffusion in MBE for mesa-structure fabrication

Journal of Crystal Growth

Volumn 209, Issue 4, 2000, Pages 591-598

  Kishimoto, D ^a   Noda, T ^a   Nakamura, Y ^b   Sakaki, H ^a   Nishinaga, T ^c  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; CRYSTAL ORIENTATION; DIFFUSION IN SOLIDS; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; NUCLEATION; SEMICONDUCTOR GROWTH; SUBSTRATES;

ADATOMS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033891534     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00535-7     Document Type: Article

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