2D-nucleation on (1 1 1)B micro-facet studied by microprobe-RHEED in GaAs MBE for mesa-structure fabrication

Journal of Crystal Growth

Volumn 216, Issue 1, 2000, Pages 1-5

  Kishimoto, D ^a   Ogura, T ^b   Yamashiki, A ^b   Nishinaga, T ^b   Naritsuka, S ^b   Sakaki, H ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; CRYSTAL ORIENTATION; DIFFUSION IN SOLIDS; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; NUCLEATION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH;

INTER-SURFACE DIFFUSION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033721774     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00403-6     Document Type: Article

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