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Volumn 72, Issue 13, 1998, Pages 1599-1601

A comparison of spectroscopic and microscopic observations of ion-induced intermixing in InGaAs/InP quantum wells

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EID: 0000424626     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121185     Document Type: Article
Times cited : (13)

References (15)
  • 12
    • 21544479205 scopus 로고    scopus 로고
    • note
    • Alloy contrast in the STM image arises from changes in the local state-density of the conduction and valence bands. Qualitatively, these changes can be estimated from the relative location of the band edges of bulk material with the same composition as the local alloy region. For example, local InAs regions in InP are expected to appear white (greater tip height) for both positive and negative bias, since the conduction band edge of bulk InAs is below that of InP and the valence band edge is above that of InP.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.