Diffusion of hydrogen and deuterium in stack systems of SixNyHz/ SixNyDz and crystalline Si

Materials Research Society Symposium-Proceedings

Volumn 609, Issue , 2000, Pages A2671-A2676

  Boehme, Christoph ^a   Lucovsky, Gerald ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL BONDS; CRYSTALLINE MATERIALS; DEUTERIUM; DIFFUSION; DISSOCIATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGEN; INTERFACES (MATERIALS); PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; THERMAL EFFECTS;

CRYSALLINE SILICON;

SILICON WAFERS;

EID: 85009834035     PISSN: 02729172     EISSN: None     Source Type: Journal    
DOI: 10.1557/proc-609-a26.7     Document Type: Article

References (9)

1. PECVD silicon nitride passivation and ARC layers for screenprinted multicrystalline silicon solar cells
2. Improvement in multicrystalline silicon solar cells after thermal treatment of PECVD silicon nitride AR coating
3. Diffusion in low pressure chemical vapour deposited silicon nitride films
4. The hydrogen content of plasma deposited silicon nitride
5. Chemically bound hydrogen in {CVD} silicon nitride-Dependence on ammonia to silane ratio and on annealing
6. Fourier Transform Infrared Study of rapid thermal annealing of a-Si:N:H(D) films prepared by remote plasma-enhanced chemical vapor deposition