Nitrogen ion implantation and thermal annealing in 6H-SiC single crystal

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 1231-1234

  Miyajima, Takeshi ^a   Tokura, Norihito ^a   Fukumoto, Atsuo ^b   Hayashi, Hidemitsu ^b   Hara, Kunihiko ^a  

^a DENSO CORPORATION   (Japan)

^b Rd Management Section   (Japan)

Author keywords

Annealing; Carrier activation; Defect; First principles calculation; Implantation; Nitrogen; Rutherford backscattering; SiC

Indexed keywords

ANNEALING; BAND STRUCTURE; CRYSTAL DEFECTS; ELECTRON ENERGY LEVELS; ION IMPLANTATION; MATHEMATICAL MODELS; NITROGEN; PROBABILITY DENSITY FUNCTION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE;

BAND GAP; CARRIER ACTIVATION RATE; CUBIC SILICON CARBIDE CRYSTAL MODEL; DEFECT DENSITY; FIRST PRINCIPLES CALCULATION; LATTICE DAMAGE;

SINGLE CRYSTALS;

EID: 0030080472     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.1231     Document Type: Article

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