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Journal of Crystal Growth

Volumn 237-239, Issue 1-4, 2002, Pages 338-344

The morphology of grown-in defects in nitrogen-doped silicon crystals

(4) Fujimori, Hiroyuki a,b Fujisawa, Hiroyuki a Hirano, Yumiko a Okabe, Toshio b

a Nissei Bldg (Japan)

b UNIVERSITY OF TOYAMA (Japan)

Author keywords

A1. Defects; B2. Semiconducting silicon

Indexed keywords

ANNEALING; CRYSTAL GROWTH FROM MELT; CRYSTAL WHISKERS; NITROGEN; PRECIPITATION (CHEMICAL); SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; TRANSMISSION ELECTRON MICROSCOPY;

WHISKER-LIKE DEFECTS;

CRYSTAL DEFECTS;

EID: 0036530519 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)01943-1 Document Type: Article

Times cited : (7)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.