Electrical properties of graphite/homoepitaxial diamond contact

Diamond and Related Materials

Volumn 11, Issue 3-6, 2002, Pages 451-457

  Chen, Y G ^a   Hasegawa, M ^a   Okushi, H ^a   Koizumi, S ^b   Yoshida, H ^a,c   Sakai, T ^c   Kobayashi, N ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c TOSHIBA CORPORATION   (Japan)

Author keywords

Applications; Diamond films; Interface; Ohmic contact

Indexed keywords

BORON; CHEMICAL VAPOR DEPOSITION; DIAMOND FILMS; DOPING (ADDITIVES); ELECTRIC PROPERTIES; SYNTHESIS (CHEMICAL);

TRANSMISSION LINE MODEL (TLM);

GRAPHITE ELECTRODES;

DIAMOND;

EID: 0036508097     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(01)00684-7     Document Type: Article

References (16)