An ultrahigh-speed resonant-tunneling analog-to-digital converter

IEICE Transactions on Electronics

Volumn E85-C, Issue 3, 2002, Pages 586-591

  Hattori, Kazufumi ^a   Takamatsu, Yuuji ^a,b   Waho, Takao ^a  

^a SOPHIA UNIVERSITY   (Japan)

^b SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

Analog to digital converter; Compound semiconductor; Quantizer; Resonant tunneling

Indexed keywords

BANDWIDTH; BINARY CODES; COMPUTER SIMULATION; GATES (TRANSISTOR); LOGIC CIRCUITS; NATURAL FREQUENCIES; RESONANT TUNNELING; SEMICONDUCTING INDIUM PHOSPHIDE; SIGNAL DISTORTION; SIGNAL TO NOISE RATIO; THRESHOLD VOLTAGE;

BINARY GRAY CODE; COMPACT CIRCUIT; EFFECTIVE NUMBER OF BITS; HETEROJUNCTION FIELD EFFECT TRANSISTOR; MONOSTABLE BISTABLE TRANSISTOR LOGIC ELEMENT; MONOSTABLE TO MULTISTATE TRANSITION LOGIC CIRCUITS; SIGNAL TO NOISE DISTORTION RATIO; SOFTWARE PACKAGE SPICE; SPURIOUS FREE DYNAMIC RANGE; TERNARY QUANTIZERS;

ANALOG TO DIGITAL CONVERSION;

EID: 0036505078     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (12)

1. A 4b 8GSample/s A/D converter in SiGe bipolar technology
2. Indium phosphide ICs unleash the high-frequency spectrum
3. Multi-GHz A/D converter using resonant-tunneling multiple-valued logic circuits
4. Ultrafast analog-to-digital converter using resonant-tunneling ternary quantizers
5. InGaAs/AlAs resonant tunneling diodes with switching time of 1.5 ps
6. Resonant-tunneling diode and HEMT logic circuits with multiple thresholds and multi-level output
7. A new resonant-tunneling logic gate employing monostable-bistable transition
8. Multi-level technique in analog-to-digital converters
9. Effects of growth temperature on electrical properties of InP-based pseudomorphic resonant tunneling diodes with ultrathin barriers grown by molecular beam epitaxy
10. A monolithic 4-bit 2-Gsps resonant tunneling analog-to-digital converter