Height control of InAs/GaAs quantum dots by combining layer-by-layer in situ etching and molecular beam epitaxy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 2, 2002, Pages 668-672

  Yang, T ^a,b   Ishikawa, T ^a   Kohmoto, S ^a   Nakamura, Y ^a,b   Nakamura, H ^a   Asakawa, K ^a  

^a WASEDA UNIVERSITY   (Japan)

^b NEW ENERGY AND INDUSTRIAL TECHNOLOGY DEVELOPMENT ORGANIZATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ENERGY DISPERSIVE SPECTROSCOPY; ETCHING; MOLECULAR BEAM EPITAXY; MONOLAYERS; NUCLEATION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY ANALYSIS;

WETTING LAYERS (WL);

SEMICONDUCTOR QUANTUM DOTS;

EID: 0036505053     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1459727     Document Type: Article

References (19)