Stress-induced failure of Si3N4 metal-insulator-metal capacitors fabricated by plasma enhanced chemical vapor deposition

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 2, 2002, Pages 717-720

  Suh, Dongwoo ^a   Kang, Jin Yeong ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITORS; DIELECTRIC MATERIALS; DIFFUSION; LEAKAGE CURRENTS; MICROSTRUCTURE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON NITRIDE; STRESS ANALYSIS; THERMAL STRESS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

METAL-INSULATOR-METAL (MIM) CAPACITORS;

MIM DEVICES;

EID: 0036504609     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1463724     Document Type: Article

References (11)