SCOPUS 정보 검색 플랫폼

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 2, 2002, Pages 608-612

Electrochemical behavior of copper chemical mechanical polishing in KlO3 slurry

(6) Hsu, Jyh Wei a Chiu, Shao Yu b Tsai, Ming Shih c Dai, Bau Tong c Feng, Ming Shiann a Shih, Han C b

a NATIONAL TSING HUA UNIVERSITY (Taiwan)

b NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

c NATIONAL NANO DEVICE LABORATORIES (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ABRASIVES; CHEMICAL MECHANICAL POLISHING; CORROSION; CORROSION RESISTANCE; ELECTROCHEMISTRY; MORPHOLOGY; OXIDATION; PASSIVATION; PH; POTASSIUM COMPOUNDS; SILICA; SLURRIES;

ACIDIC SLURRIES;

COPPER;

EID: 0036504556 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.1458956 Document Type: Article

Times cited : (5)

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