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Volumn 198-199, Issue PART I, 1999, Pages 176-181

Morphological change of semiconductor growth interface from solution in a magnetic field

(3) Inatomi, Y a Takada, A b Kuribayashi, K a

a JAPAN AEROSPACE EXPLORATION AGENCY (Japan)

Author keywords

GaP(111)B substrate; In situ observation of semiconductor growth interface; NIR microscopy; Rotating and static magnetic fields; Solution growth; Thermal and solutal convections

Indexed keywords

COOLING; CRYSTAL ORIENTATION; HEAT CONVECTION; MAGNETIC FIELD EFFECTS; MICROSCOPIC EXAMINATION; MORPHOLOGY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SOLENOIDS;

GALLIUM PHOSPHIDE; LINEAR COOLING METHOD;

SEMICONDUCTOR JUNCTIONS;

EID: 0033514752 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)01184-1 Document Type: Article

Times cited : (3)

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