Direct observation of LPE heterogrowth of GaAs on a GaP substrate

Journal of Crystal Growth

Volumn 208, Issue 1, 2000, Pages 33-36

  Tanaka, Akira ^a   Izumi, Naoki ^a   Kimura, Masakazu ^a   Sukegawa, Tokuzo ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COOLING; LIQUID PHASE EPITAXY; MICROSCOPES; NUCLEATION; SEMICONDUCTOR GROWTH;

DIRECT OBSERVATION SYSTEM; GALLIUM PHOSPHIDE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033883298     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00496-0     Document Type: Article

References (8)

1. Van Dam J.C., Mischgofsky F.H. J. Cryst. Growth. 84:1987;539.
2. Onuma K., Tsukamoto K., Sunagawa I. J. Cryst. Growth. 98:1989;377.
3. Onuma K., Kameyama T., Tsukamoto K. J. Cryst. Growth. 137:1994;610.
4. Fabietti L.M., Trivedi R. J. Cryst. Growth. 173:1997;503.
5. Inatomi Y., Kuribayashi K. J. Cryst. Growth. 99:1990;124.
6. Inatomi Y., Kuribayashi K. J. Cryst. Growth. 114:1991;380.
7. Kuznetsov V.V., Moskvin P.P., Sorokin V.S. J. Cryst. Growth. 88:1988;241.
8. Bolkhovityanov Yu.B. Progr. Cryst. Growth Charact. 19:1989;159.