SCOPUS 정보 검색 플랫폼

Journal of Crystal Growth

Volumn 236, Issue 1-3, 2002, Pages 51-58

In-situ HRTEM observation of the melting-crystallization process of silicon

(3) Nishizawa, H a Hori, F a Oshima, R a

a Osaka Prefecture University (Japan)

Author keywords

A1. Defects; A1. Interfaces; A1. Point defects; A1. Solidification; A2. Growth from melt; B2. Semiconducting silicon

Indexed keywords

HIGH RESOLUTION ELECTRON MICROSCOPY; HIGH TEMPERATURE OPERATIONS; MELTING; POINT DEFECTS; SEMICONDUCTING SILICON; SOLIDIFICATION; TRANSMISSION ELECTRON MICROSCOPY;

MELTING CRYSTALLIZATION;

CRYSTALLIZATION;

EID: 0036499216 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)02156-X Document Type: Article

Times cited : (15)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.