New barrier layers can help Cu/low-k integration

Solid State Technology

Volumn 45, Issue 3, 2002, Pages 37-38+40+42

  Gray, W D ^a   Loboda, M J ^a  

^a DOW CORNING CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CHEMICAL MECHANICAL POLISHING; COPPER; DIELECTRIC MATERIALS; HYDROGEN; INTEGRATED CIRCUIT MANUFACTURE; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMAS; SILICA; SILICON CARBIDE; THIN FILMS;

AMORPHOUS HYDROGENATED SILICON CARBIDE FILMS; COPPER FILM TECHNOLOGY; DAMASCENE STRUCTURES; INTERCONNECT STRUCTURES; INTERLAYER DIELECTRIC; LOW K THIN FILM MATERIALS; PLASMA OXIDE;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0036496424     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

References (8)

1. BLOK-A low-k dielectric barrier/etch stop film for copper damascene applications
2. New solutions for intermetal dielectrics using trimethylsilane-based PECVD processes
3. Applications of organosilicon gases in plasma enhanced chemical vapor deposition of low-dielectric constant films
4. Process optimization of trimethylsilane deposited a SiC:H and SiOC:H dielectric thin films for damascene processing
5. PEARL - PECVD anti-reflective layer for sub-0.35μm lithography
6. Anti-reflective coatings: A story of interfaces
7. Integration of 3MS low-k CVD material in 0.18μm Cu single Damasc. Proc.
8. Low dielectric constant 3MS a-SiC:H as Cu diffusion barrier layer in Cu dual damascene process