Analysis on high-frequency characteristics of SOI lateral BJTs with self-aligned external base for 2-GHz RF applications

IEEE Transactions on Electron Devices

Volumn 49, Issue 3, 2002, Pages 414-421

  Shino, Tomoaki ^b   Yoshitomi, Sadayuki ^b   Nii, Hideaki ^a,b   Kawanaka, Shigeru ^a,b   Inoh, Kazumi ^b   Yamada, Takashi ^a,b   Fuse, Tsuneaki ^b   Katsumata, Yasuhiro ^a,b   Yoshimi, Makoto ^b   Watanabe, Shigeyoshi ^b   Matsunaga, Jun Ichi ^b  

^a IEEE

^b TOSHIBA CORPORATION   (Japan)

Author keywords

Bipolar transistors; Semiconductor device fabrication; Silicon on insulator (SOI) technology

Indexed keywords

CROSSTALK; OPTIMIZATION; OSCILLATIONS; POLYSILICON; SILICON ON INSULATOR TECHNOLOGY;

OSCILLATION FREQUENCY;

BIPOLAR TRANSISTORS;

EID: 0036494452     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.987111     Document Type: Article

References (21)

1. A novel high-performance lateral bipolar on SOI
2. A thin-base lateral bipolar transistor fabricated on bonded SOI
3. An ultra low power bipolar polysilicon emitter technology on SOI
4. TFSOI complementary BiCMOS technology for low power applications
5. Low-frequency noise dependence of TFSOI BiCMOS for low power RF mixed-mode applications
6. An ultra low-power RF bipolar technology on glass
7. 3-D simulation analysis of high performance SOI lateral BJT for RF applications
8. max lateral BJT on SOI using self-aligned external base formation technology
9. Design considerations of high-performance narrow-emitter bipolar transistors
10. The effect of extrinsic base encroachment on the switch-on transient of advanced narrow-emitter bipolar transistors
11. Base peripheral effects on future self-aligned bipolar device for VLSI's
12. 29 Ps ECL circuits using U-groove isolated SICOS technology
13. BASIC: An advanced high-performance bipolar process
14. Charge sharing effects in bipolar transistors with sub-halfmicron emitter widths
15. A 0.5-μm very-high-speed silicon bipolar devices technology-U-groove-isolated SICOS
16. max of 40 GHz and its application to a 35 GHz 1/16 dynamic frequency divider
17. Sidewall effects on maximum cutoff frequency and forward transit time in downscaled bipolar transistors
18. T in microwave bipolar transistors
19. A 20-ps Si bipolar IC using advanced super self-aligned process technology with collector ion implantation
20. Substrate crosstalk reduction using SOI technology
21. A SOI-RF-CMOS technology on high resistivity SIMOX substrates for microwave applications to 5 GHz