Dislocation density of MBE grown Hg1-xCdxTe on ZnCdTe substrates

Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

Volumn 21, Issue 1, 2002, Pages 23-27

  Wu, Yan ^a   Yu, Mei Fang ^a   Chen, Lu ^a   Qiao, Yi Min ^a   Yang, Jian Rong ^a   He, Li ^a  

^a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

Dislocation density; Hg1 xCdxTe; Molecular beam epitaxy

Indexed keywords

DISLOCATIONS (CRYSTALS); MERCURY COMPOUNDS; MOLECULAR BEAM EPITAXY; ZINC COMPOUNDS;

DISLOCATION DENSITY; GROWTH CONDITION;

THIN FILMS;

EID: 0036485625     PISSN: 10019014     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (11)

1. EBIC characterization of recrystallized HgCdTe
2. Charged dislocation and jogs in HgCdTe and other II-VI compounds
3. Effect of dislocations on the electrical and optical properties of long-wavelength infrared HgCdTe photovoltaic detectors
4. MBE in situ high temperature annealing of HgCdTe
5. A study of MBE growth and thermal annealing of p-type long wavelength HgCdTe
6. Etch pit characterization of CdTe and CdZnTe substrates for use in mercury cadmium telluride epitaxy
7. Etchant for revealing dislocation in II-IV compound
8. Study of dislocation in MBE HgCdTe epilayers
9. Composition control and surface defects of MBE-grown HgCdTe
10. Formation and control of defects during molecular beam epitaxy growth of HgCdTe
11. Improving material characteristics and reproducibility of MBE HgCdTe