Accuracy of overlay metrology with nonp-enetrating and negative-charging electron beam of the scanning electron microscope

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 2 A, 2002, Pages 915-917

  Koike, Toru ^a   Ikeda, Takahiro ^a   Miyoshi, Motosuke ^b   Okumura, Katsuya ^b   Ura, Katsumi ^a  

^a TOSHIBA CORPORATION   (Japan)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

Negative charging; Overlay metrology; SEM; Signal intensity

Indexed keywords

ELECTRIC CURRENTS; IMAGE ANALYSIS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING FILMS;

INSULATOR FILMS;

ELECTRON BEAMS;

EID: 0036478540     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.915     Document Type: Article

References (6)