Static capacitance contrast of LSI covered with an insulator film in low accelerating voltage scanning electron microscope

Journal of Electron Microscopy

Volumn 49, Issue 1, 2000, Pages 157-162

  Ura, Katsumi ^a   Aoyagi, Sadao ^b  

^a OSAKA SANGYO UNIVERSITY   (Japan)

^b JEOL LTD   (Japan)

Author keywords

Low accelerating voltage scanning electron microscope; Passivated LSI; Re distribution of secondary electrons

Indexed keywords

CAPACITANCE; LSI CIRCUITS; SCANNING ELECTRON MICROSCOPY;

IMAGE CONTRASTS; INSULATOR FILMS; LOW ACCELERATING VOLTAGE; LOW ACCELERATING VOLTAGE SCANNING ELECTRON MICROSCOPE; PASSIVATED LSI; RE-DISTRIBUTION; RE-DISTRIBUTION OF SECONDARY ELECTRON; SCANNING ELECTRONS; SECONDARY ELECTRONS; STATIC CAPACITANCE;

ELECTRONS;

EID: 0034069046     PISSN: 00220744     EISSN: None     Source Type: Journal    
DOI: 10.1093/oxfordjournals.jmicro.a023780     Document Type: Article

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