High-power mid-infrared light emitting diodes grown by MOVPE

IEE Proceedings: Optoelectronics

Volumn 149, Issue 1, 2002, Pages 36-39

  Kizhayev, S S ^a   Zotova, N V ^a   Molchanov, S S ^a   Yakovlev, Y P ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTROLUMINESCENCE; ENERGY GAP; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING ANTIMONY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; JOULE HEATING; LATTICE MATCH; LINE INTENSITY; NON-RADIATIVE AUGER RECOMBINATION MECHANISM; OPTICAL POWER; POWER SATURATION; PULSED MODE; QUASI CONTINUOUS WAVE MODE; WAVELENGTH RANGE;

LIGHT EMITTING DIODES;

EID: 0036476817     PISSN: 13502433     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-opt:20020171     Document Type: Article

References (13)

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13. x