Effect of Ar ion beam channeling on AlGaN/GaN heterostructures during the ion beam etching process

Applied Physics Letters

Volumn 76, Issue 14, 2000, Pages 1899-1901

  Breitschadel O ^a   Hsieh, J T ^a   Kuhn, B ^a   Scholz, F ^a   Schweizer, H ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0346985634     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126205     Document Type: Article

References (7)

1. S. Nakamura and G. Fasol, The Blue Laser Diode (Springer, Berlin, 1997).
2. Group III Nitride Semiconductor Compounds, edited by B. Gil (Oxford University Press, Oxford, 1998).
3. Optoelectronic Properties of Semiconductors and Superlattices, edited by S. J. Pearton, Vol. 2: GaN and Related Materials (Gordon and Breach, Amsterdam, The Netherlands, 1997).
4. O. Breitschädel, B. Kuhn, F. Scholz, and H. Schweizer, J. Electron. Mater. 28, 1420 (1999).
5. Handbook of Ion Implantation, edited by J. F. Ziegler (North-Holland, Amsterdam, The Netherlands, 1992).
6. J. F. Ziegler, J. P. Biersack, and U. Littmark, The Stopping and Range of Ions in Solids (Pergamon, New York, 1985).
7. W. Qian, G. S. Rohrer, M. Skowronski, K. Doverspike, L. B. Rowland, and D. K. Gaskill, Appl. Phys. Lett. 67, 2284 (1995).