Photoluminescence characterization of InAs/GaAs quantum dot bilayers

Materials Science and Engineering: B

Volumn 88, Issue 2-3, 2002, Pages 164-167

  Le Ru, Eric C ^a   Marchioni, Ursula ^a   Bennett, Anthony ^a   Joyce, Peter B ^a   Jones, Tim S ^a   Murray, Ray ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

Multilayer; Photoluminescence; Quantum dots

Indexed keywords

ELECTRON EMISSION; ELECTRON TUNNELING; GROUND STATE; MULTILAYERS; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SOLID STATE LASERS;

ELECTRONICALLY COUPLED; WETTING LAYERS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 1642350363     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(01)00881-9     Document Type: Conference Paper

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