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Journal of Applied Physics

Volumn 91, Issue 3, 2002, Pages 1624-1627

Chemical defect explanation for the effect of postdeposition treatments on CuInSe 2

(5) Otte, K a Chasse T a Lippold, G a Rauschenbach, B a Szargan, R b

a LEIBNIZ INSTITUTE OF SURFACE ENGINEERING IOM (Germany)

b UNIVERSITY OF LEIPZIG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANTISITES; BANDBENDING; BUILT-IN ELECTRIC FIELDS; CHEMICAL DEFECTS; DEFECT MODEL; DEFECT PROPERTY; HYDROGEN ION IMPLANTATION; LOW ENERGIES; P-TYPE; POST DEPOSITION TREATMENT;

HYDROGEN; ION IMPLANTATION; OXYGENATION; PHOTOELECTRONS; SELENIUM; X RAY PHOTOELECTRON SPECTROSCOPY;

COPPER COMPOUNDS;

EID: 0036469582 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1428096 Document Type: Article

Times cited : (10)

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