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Applied Surface Science

Volumn 179, Issue 1-4, 2001, Pages 203-208

Conductivity type conversion of p-type CuInSe 2 due to hydrogenation

(5) Otte, K a Lippold, G a Hirsch, D a Gebhardt, R K b Chasse T a,b

a LEIBNIZ INSTITUTE OF SURFACE ENGINEERING IOM (Germany)

b UNIVERSITY OF LEIPZIG (Germany)

Author keywords

CuInSe 2; Defects; Hydrogen; Implantation; XPS

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL LATTICES; ELECTRIC CONDUCTIVITY; FERMI LEVEL; HYDROGENATION; ION IMPLANTATION; OXIDATION; RAMAN SPECTROSCOPY; SINGLE CRYSTALS; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY;

LOW ENERGY HYDROGEN ION IMPLANTATION;

COPPER COMPOUNDS;

EID: 0035898808 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(01)00280-X Document Type: Article

Times cited : (14)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.