TMR of double spin-valve type AF/FM/I/FM/I/FM/AF magnetic tunneling junctions

Journal of Magnetism and Magnetic Materials

Volumn 240, Issue 1-3, 2002, Pages 137-139

  Lee, J H ^a,b   Chang, In Woo ^a   Byun, S J ^a   Hong, T K ^a   Rhie, K ^a   Lee, W Y ^b   Shin, Kyung Ho ^b   Hwang, Chanyong ^c   Lee, S S ^d   Lee, B C ^e  

^a Korea University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

^c Korea Research Institute of Standards and Science   (South Korea)

^d Sangji University   (South Korea)

^e Inha University   (South Korea)

Author keywords

Double barrier; Magnetoresistance; MTJ; Thin films; TMR

Indexed keywords

FERROMAGNETIC MATERIALS; HIGH TEMPERATURE EFFECTS; MAGNETIC THIN FILMS; MAGNETRON SPUTTERING; MULTILAYERS; TUNNEL JUNCTIONS;

MAGNETIC TUNNEL JUNCTIONS (MTJ);

MAGNETORESISTANCE;

EID: 0036465016     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0304-8853(01)00761-2     Document Type: Article

References (13)