Microstructural and magnetic characteristics of IrMn exchange-biased tunnel junctions

Journal of Magnetism and Magnetic Materials

Volumn 240, Issue 1-3, 2002, Pages 130-133

  Yu, Andrew C C ^a   Han, X F ^a   Murai, J ^a   Ando, Y ^a   Miyazaki, T ^a   Hiraga, K ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

Annealing effect; Exchange biasing; Magnetoresistance; Microstructure; Transmission electron microscopy; Tunneling

Indexed keywords

ANNEALING; ELECTRON TUNNELING; INTERFACES (MATERIALS); IRIDIUM COMPOUNDS; MAGNETORESISTANCE; MICROSTRUCTURE; TRANSMISSION ELECTRON MICROSCOPY; TUNNEL JUNCTIONS;

MAGNETIC TUNNEL JUNCTIONS (MTJ);

MAGNETIC MATERIALS;

EID: 0036464788     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0304-8853(01)00734-X     Document Type: Article

References (10)