Dependence of mask defect printability and printability criteria on lithography process resolution

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4562 I, Issue , 2001, Pages 122-129

  Stivers, Alan ^a   Tejnil, Edita ^a  

^a INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; DEFECTS; IMAGE ANALYSIS; OPTICAL RESOLVING POWER; PHOTOLITHOGRAPHY;

MASK DEFECTS;

MASKS;

EID: 0035763735     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.458279     Document Type: Conference Paper

References (5)

1. A.R. Neureuther, P. Flanner III and S. Shen, "Coherence of defect interactions with features in optical imaging," J. Vac. Sci. Technol., B 5, pp. 308-12, 1987.
2. J.N. Wiley, J.A. Reynolds, "Device Yield and Reliability by Specification of Mask Defects," Solid State Technology, July 1993.
3. J.N. Wiley, "Effect of Stepper Resolution on the Printability of Submicron 5x Reticle Defects," Proc. SPIE, 1088, pp. 58-73, 1989.
4. Y.M. Ham, I.B. Hur, Y.S. Kim, D.J. Ahn, Zion Cha, S.S. Choi, H.J. Kim, and Y.J. Jeon, "Dependence of Defects in Optical Lithography," Jpn. J. Appl. Phys., 31, pp. 4137-42, 1992.
5. st ed.,Chapter 10, Section 4, Wiley-Interscience, New York, 1969.